Which of the following options is true?

Group I lists four types of p-n junction diodes. Match each device in Group I with one of the option in Group II to indicate the bias condition of that device in its normal mode of operation.||| |---|---| | Group I| Group II| | (P) Zener Diode| (1) Forward bias| | (Q) Solar cell| (2) Reverse bias| | (R) LASER diode| | | (S) Avalanche Photodiode| |

A silicon sample A is doped with 10¹⁸ atoms/cm³ of Boron. Another sample B of identical dimensions is doped with 10¹⁸ atoms/cm³ of Phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is

The DC current gain ($\beta$)of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is

The phenomenon known as “Early Effect” in a bipolar transistor refers to a reduction of the effective base-width caused by

The cross section of a JFET is shown in the following figure. Let V_c be − 2V and let V_P be the initial pinch -off voltage. If the width W is doubled (with other geometrical parameters and doping levels remaining the same), then the ratio between the mutual trans conductances of the initial and the modified JFET is

The electron and hole concentrations in an intrinsic semiconductor are n_i per cm³ at 300 K. Now, if acceptor impurities are introduced with a concentration of N_A per cm³ where (where N_A >> n_i), the electron concentration per cm³ at 300 K will be

The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a Metal/SiO₂ /silicon (MOS) capacitor having an area of 1 $\times$10^-4 cm². Assume that the permittivities ($\epsilon_0 \epsilon_r$) of silicon and SiO₂ are 1 $\times$ 10^-12 F / cm and 3.5 $\times$10^-13 F / cm respectively.

The gate oxide thickness in the MOS capacitor is

In the circuit shown below, the switch was connected to position 1 at t < 0 and at t = 0, it is changed to position 2. Assume that the diode has zero voltage drop and a storage time t_s For 0 < t$\le$ t_s , v_R is given by (all in Volts)

A MOS capacitor is made using p-type substrate in the accumulation mode. The dominant charge in the channel is due to the presence of

At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is

The electron concentration in a sample of uniformly doped n-type silicon at 300 K varies linearly from 10¹⁷/cm³ at x = 0 to 6 $\times$10¹⁶/cm³ at x = 2 $\mu$m. Assume a situation that electrons are supplied to keep this concentration gradient constant with time. If electronic charge is 1.6$\times$10^-19 coulomb and the diffusion constant Dn = 35 cm²/s, the current density in the silicon, if no electric field is present, is

The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a Metal/SiO₂ /silicon (MOS) capacitor having an area of 1 $\times$10^-4 cm². Assume that the permittivities ($\epsilon_0 \epsilon_r$) of silicon and SiO₂ are 1 $\times$ 10^-12 F / cm and 3.5 $\times$10^-13 F / cm respectively.

Consider the following statements about the C-V characteristics plot: S1: The MOS capacitor has an n-type substrate. S2: If positive charges are introduced in the oxide, the C-V plot will shift to the left. Which of the following is true?

The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a Metal/SiO₂ /silicon (MOS) capacitor having an area of 1 $\times$10^-4 cm². Assume that the permittivities ($\epsilon_0 \epsilon_r$) of silicon and SiO₂ are 1 $\times$ 10^-12 F / cm and 3.5 $\times$10^-13 F / cm respectively.

The maximum depletion layer width in silicon is

If for a silicon npn transistor, the base-to-emitter voltage (V_BE) is 0.7 V and the collector-to-base voltage (V_CB) is 0.2 V, then the transistor is operating in the

Consider an abrupt p - n junction. Let V_bi be the built-in potential of this junction and V_R be the applied reverse bias. If the junction capacitance (C_j) is 1 pF for V_bi + V_R = 1 V, then for V_bi + V_R = 4 V, C_j will be

The drain of an n-channel MOSFET is shorted to the gate so that V_GS = V_DS. The threshold voltage (V_T) of the MOSFET is 1 V. If the drain current (I_D) is 1 mA for V_GS = 2 V, then for V_GS = 3 V, I_D is

The longest wavelength that can be absorbed by silicon, which has the bandgap of 1.12 eV, is 1.1 $\mu$m. If the longest wavelength that can be absorbed by another material is 0.87 $\mu$m, then bandgap of this material is

The resistivity of a uniformly doped n −type silicon sample is 0.5 ظ - mc. If the electron mobility ($\mu_0$) is 1250 cm² / V-sec and the charge of an electron is 1.6 x 10^-19 Coulomb, the donor impurity concentration (N_D) in the sample is

The ratio of the mobility to the diffusion coefficient in a semiconductor has the units