Spin is the intrinsic angular momentum of electrons, which can be either 'up' or 'down'.

Ferromagnetic metals, such as iron, cobalt, and nickel, have a net magnetic moment due to the alignment of electron spins.

Magnetic fields are used to manipulate the spin of electrons in spintronic devices.

STT-MRAM utilizes the spin of electrons to store information in magnetic tunnel junctions.

Spintronic devices consume less power compared to conventional electronic devices due to the absence of charge flow.

Spin-orbit coupling enables the manipulation of electron spin through electric fields in spin-based transistors.

Spintronic devices are promising candidates for realizing qubits due to their ability to store and manipulate quantum information.

Bismuth Selenide (Bi2Se3) is a topological insulator with unique spin-related properties, making it a promising material for spintronic applications.

Spin-injection is the process of introducing spin-polarized electrons into a non-magnetic material from a magnetic material.

STT-MRAM utilizes spin-transfer torque to switch the magnetization of a magnetic tunnel junction, enabling non-volatile memory operation.

In ferromagnetism, the spins of neighboring atoms are aligned parallel, while in antiferromagnetism, they are aligned antiparallel.

GMR sensors utilize the change in electrical resistance due to the relative orientation of magnetic layers to detect magnetic fields.

The spin-orbit interaction arises from the relativistic motion of electrons in the presence of an electric field gradient.

TMR sensors utilize the change in tunneling current due to the relative orientation of magnetic layers to detect magnetic fields.

Integrating spintronic devices with conventional CMOS technology is a significant challenge due to material and process compatibility issues.