Plasma Processing

Description: This quiz covers the fundamental concepts and applications of plasma processing, a critical technology used in the fabrication of semiconductors and other advanced materials.
Number of Questions: 15
Created by:
Tags: plasma physics materials science semiconductor fabrication
Attempted 0/15 Correct 0 Score 0

What is the primary energy source used to generate plasma in plasma processing?

  1. Electrical Discharge

  2. Chemical Reaction

  3. Mechanical Energy

  4. Nuclear Fusion


Correct Option: A
Explanation:

Plasma is typically generated using electrical discharge, where a high voltage is applied across a gas, causing the gas to ionize and become plasma.

Which of the following is a common type of plasma processing technique used for etching materials?

  1. Reactive Ion Etching (RIE)

  2. Chemical Vapor Deposition (CVD)

  3. Physical Vapor Deposition (PVD)

  4. Rapid Thermal Annealing (RTA)


Correct Option: A
Explanation:

Reactive Ion Etching (RIE) is a plasma processing technique used to etch materials by bombarding the surface with reactive ions, typically in the presence of a reactive gas.

What is the primary mechanism responsible for material removal in plasma etching?

  1. Sputtering

  2. Chemical Reaction

  3. Thermal Decomposition

  4. Ion Implantation


Correct Option: A
Explanation:

In plasma etching, material removal primarily occurs through a process called sputtering, where ions in the plasma bombard the surface of the material, causing atoms to be ejected.

Which of the following is a common type of plasma processing technique used for depositing materials?

  1. Chemical Vapor Deposition (CVD)

  2. Physical Vapor Deposition (PVD)

  3. Atomic Layer Deposition (ALD)

  4. Molecular Beam Epitaxy (MBE)


Correct Option: A
Explanation:

Chemical Vapor Deposition (CVD) is a plasma processing technique used to deposit materials by introducing a precursor gas into the plasma, which reacts with the surface of the substrate to form the desired material.

What is the primary mechanism responsible for material deposition in plasma CVD?

  1. Sputtering

  2. Chemical Reaction

  3. Thermal Decomposition

  4. Ion Implantation


Correct Option: B
Explanation:

In plasma CVD, material deposition primarily occurs through chemical reactions between the precursor gas and the surface of the substrate, leading to the formation of the desired material.

Which of the following is a common type of plasma processing technique used for surface modification?

  1. Plasma Nitriding

  2. Plasma Oxidation

  3. Plasma Polymerization

  4. Plasma Doping


Correct Option: A
Explanation:

Plasma Nitriding is a plasma processing technique used to modify the surface of materials by introducing nitrogen atoms into the surface, improving properties such as hardness and wear resistance.

What is the primary mechanism responsible for surface modification in plasma nitriding?

  1. Sputtering

  2. Chemical Reaction

  3. Thermal Decomposition

  4. Ion Implantation


Correct Option: B
Explanation:

In plasma nitriding, surface modification primarily occurs through chemical reactions between nitrogen ions and the surface of the material, leading to the formation of nitrides.

Which of the following is a common type of plasma processing technique used for cleaning surfaces?

  1. Plasma Ashing

  2. Plasma Etching

  3. Plasma Deposition

  4. Plasma Nitriding


Correct Option: A
Explanation:

Plasma Ashing is a plasma processing technique used to clean surfaces by removing organic contaminants and residues through a combination of chemical reactions and physical sputtering.

What is the primary mechanism responsible for surface cleaning in plasma ashing?

  1. Sputtering

  2. Chemical Reaction

  3. Thermal Decomposition

  4. Ion Implantation


Correct Option: B
Explanation:

In plasma ashing, surface cleaning primarily occurs through chemical reactions between the plasma species and the contaminants on the surface, leading to the removal of the contaminants.

Which of the following is a common type of plasma processing technique used for enhancing adhesion between materials?

  1. Plasma Activation

  2. Plasma Etching

  3. Plasma Deposition

  4. Plasma Nitriding


Correct Option: A
Explanation:

Plasma Activation is a plasma processing technique used to enhance adhesion between materials by modifying the surface chemistry and increasing the surface energy, promoting better bonding.

What is the primary mechanism responsible for enhancing adhesion in plasma activation?

  1. Sputtering

  2. Chemical Reaction

  3. Thermal Decomposition

  4. Ion Implantation


Correct Option: B
Explanation:

In plasma activation, adhesion enhancement primarily occurs through chemical reactions between the plasma species and the surface of the material, leading to the formation of functional groups that promote bonding.

Which of the following is a common type of plasma processing technique used for sterilization?

  1. Plasma Sterilization

  2. Plasma Etching

  3. Plasma Deposition

  4. Plasma Nitriding


Correct Option: A
Explanation:

Plasma Sterilization is a plasma processing technique used to sterilize medical devices and other products by exposing them to a plasma, which effectively kills microorganisms.

What is the primary mechanism responsible for sterilization in plasma sterilization?

  1. Sputtering

  2. Chemical Reaction

  3. Thermal Decomposition

  4. Ion Implantation


Correct Option: B
Explanation:

In plasma sterilization, sterilization primarily occurs through chemical reactions between the plasma species and the microorganisms, leading to the inactivation or destruction of the microorganisms.

Which of the following is a common type of plasma processing technique used for nanomaterial synthesis?

  1. Plasma Synthesis

  2. Plasma Etching

  3. Plasma Deposition

  4. Plasma Nitriding


Correct Option: A
Explanation:

Plasma Synthesis is a plasma processing technique used to synthesize nanomaterials by introducing precursors into the plasma, which react to form nanoparticles or nanostructures.

What is the primary mechanism responsible for nanomaterial synthesis in plasma synthesis?

  1. Sputtering

  2. Chemical Reaction

  3. Thermal Decomposition

  4. Ion Implantation


Correct Option: B
Explanation:

In plasma synthesis, nanomaterial synthesis primarily occurs through chemical reactions between the precursors and the plasma species, leading to the formation of nanoparticles or nanostructures.

- Hide questions