In the silicon BJT circuit shown below, assume that the emitter area of transistor Q1 is half that of transistor Q2.

The value of current I₀ is approximately

Generally, the gain of a transistor amplifier falls at high frequencies due to the

Voltage series feedback (also called series-shunt feedback) results in

The OPAMP circuit shown above represents a

The diodes and capacitors in the circuit shown are ideal. The voltage v(t) across the diode D₁ is

An n-channel depletion MOSFET has following two points on its I_D -V_GS curve: (i) V_GS = 0 at I_D = 12 mA and (ii) V_GS = - 6 volts at I_D = 0

Which of the following Q-points will give the highest trans-conductance gain for small signals?

The effect of current shunt feedback in an amplifier is to

In the CMOS circuit shown, electron and hole mobilities are equal, and M₁ and M₂ are equally sized. The device M₁ is in the linear region if

The Op-amp circuit shown in the figure below is a filter. The type of filter and its cut-off frequency are respectively

What is the frequency of radio waves radiated out by an oscillating circuit consisting of condenser of capacity 0.02 microfarad and inductance 8 microhenry?

Consider the common emitter amplifier shown below with the following circuit parameters.

B = 100, g_m = 0.3861 A/V, r₀ = ^_$\infty$, r_p = 259 W, R_S = 1 kW, R_B = 93 kW, R_C = 250 W, R_L = 1 kW, C₁ = ^_$\infty$ and C₂ = 4.7 mF.

The lower cut-off frequency due to C₂ is

In a transconductance amplifier, it is desirable to have

Consider the common emitter amplifier shown below with the following circuit parameters.

B = 100, g_m = 0.3861 A/V, r₀ = ^_$\infty$, r_p = 259 W, R_S = 1k W, R_B = 93kW, R_C = 250 W, R_L = 1k W, C₁ = ^_$\infty$ and C₂ = 4.7mF.

The resistance seen by the source Vs is

The input resistance R_i of the amplifier shown in the figure is

The current i_b through the base of a silicon npn transistor is 1 + 0.1 cos(10000 ^_$\pi$t) mA. At 300 K, the r$\pi$ in the small signal model of the transistor is

Choose the correct match for input resistance of various amplifier configurations shown below.||| |---|---| | Configuration| Input resistance| | CB: Common Base| O: Low| | CC: Common Collector| MO: Moderate| | CE: Common Emitter| HI: High|

The voltage gain A_v of the circuit shown below is

Directions: Consider the CMOS circuit shown below, where the gate voltage v₀ of the n-MOSFET is increased from zero, while the gate voltage of the p −MOSFET is kept constant at 3 V. Assume that, for both transistors, the magnitude of the threshold voltage is 1 V and the product of the trans-conductance parameter is 1 mAV^-2.

For small increase in V_G beyond 1 V, which of the following gives the correct description of the region of operation of each MOSFET?

Directions: Consider the CMOS circuit shown, where the gate voltage v₀ of the n-MOSFET is increased from zero, while the gate voltage of the p−MOSFET is kept constant at 3 V. Assume that, for both transistors, the magnitude of the threshold voltage is 1 V and the product of the trans-conductance parameter is 1 mA V^-2.

Estimate the output voltage V₀ for V_G = 15 V.