In the following transistor circuit, V_BE = 0.7 V, r₃ = 25 mV / I_E, and $\beta$ and all the capacitances are very large

The mid-band voltage gain of the amplifier is approximately

In the circuit below, the diode is ideal. The voltage V is given by

In the circuit shown below, for the MOS transistors, $\mu_n \ C_{ox}$ = 100$\mu A / V^2$and the threshold voltage V_T = 1V. The voltage V_x at the source of the upper transistor is

In the following transistor circuit, V_BE = 0.7 V, r₃ = 25 mV / I_E and $\beta$ and all the capacitances are very large.

The value of DC current I_E is

Consider the Op-Amp circuit shown in the figure.

The transfer function V₀ (s) / V_i (s) is

The input impedance (Z_i) and the output impedance (Z₀) of an ideal trans - conductance (voltage controlled current source) amplifier are

Assuming the OP-AMP to be ideal, the voltage gain of the amplifier shown below is

Consider the Op-Amp circuit shown in the figure.

If V_i = V₁ sin ($\omega t$) and V₀ = V₂ sin ($\omega t$+ $\phi$), the minimum and maximum values of $\phi$(in radians) are respectively

A bipolar transistor is operating in the active region with a collector current of 1 mA. Assuming that the $\beta$ of the transistor is 100 and the thermal voltage (V_T) is 25 mV, the transconductance (g_m) and the input resistance ($r_x$)the transistor in the common emitter configuration, are

If the input to the ideal comparator shown in figure is a sinusoidal signal of 8V (peak to peak) without any DC component, then the output of the comparator has a duty cycle of

Consider the following circuit using an ideal OPAMP. The I - V characteristic of the diode is described by the relation I = I_{0$e^{\left (\frac{V}{V1}-1 \right)}$}where V_T = 25 mV, I₀ = 1$\mu$A and V is the voltage across the diode (taken as positive for forward bias). For an input voltage V_i = - 1 V, the output voltage V₀ is

Given r_d = 20 k$\Omega$, I_DSS = 10 mA, V_p = -8 V.

Z_i and Z₀ of the circuit are respectively

In the op-amp circuit given in the figure, the load current i_L is

For the BJT Q_L in the circuit shown below, $\beta = \infty$, $V_{BE_{on}} = 0.7, V_{CE_{sat}}$0.7V. The switch is initially closed. At time t = 0, the switch is opened. The time t at which Q₁ leaves the active region is

Consider the Schmidt trigger circuit shown below: A triangular wave which goes from - 12 V to 12 V is applied to the inverting input of OPMAP. Assume that the output of the OPAMP swings from + 15 V to - 15 V. The voltage at the non-inverting input switches between

A small signal source V_i = A cos 20 t + B sin 10⁶ t is applied to a transistor amplifier as shown below. The transistor has $\beta$= 150 and h_ie = 3 $\Omega$. Which expression best approximate V₀ (t)?

For a BJT the common base current gain $\alpha$ = 0.98 and the collector base junction reverse bias saturation current I_CO 0.6$\mu A$. This BJT is connected in the common emitter mode and operated in the active region with a base drive current I_B = 20XA. The collector current I_C for this mode of operation is

An ideal sawtooth voltage waveform of frequency 500 Hz and amplitude 3 V is generated by charging a capacitor of 2 $\mu$F in every cycle. The charging requires

Given, r_d = 20 k$\Omega$, I_DSS = 10 mA, V_p = -8 V

Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively

Given r_d = 20 k$\Omega$, I_DSS = 10 mA, V_p = -8 V.

I_D and I_DS under DC conditions are respectively